shantou huashan electronic devices co.,ltd . applications pnp epitaxial darlington tran sistor. high dc current gain. monolithic construction with built-in base-emitter shunt resistors. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage -100 v i c =-1ma, i e =0 bv ceo collector-emitter breakdown voltage -100 v i c =-5ma, i b =0 h fe *dc current gain 1000 v ce =-3v, i c =-0.5a v ce(sat1) *collector- emitter saturation voltage -2.0 v i c =-3a, i b =-12ma v ce(sat2) *collector- emitter saturation voltage -4.0 v i c =-3a, i b =-20ma v be(on) *base-emitter on voltage -2.5 v v ce =-3v, i c =-3a i ceo collector cut-off current -0.5 ma v cb =-50v, i b =0 i cbo collector cut-off current -0.2 ma v cb =-100v, i e =0 i ebo emitter cut-off current -2.0 ma v eb =-5v, i c =0 cob output capacitance 300 pf v cb =-10v, i e =0 f=0.1 mhz * pulse test pw 300 sduty cycle 2% t stg storage temperature -55~150 t j junction temperature 150 p c collector dissipation tc=25 65w p c collector dissipation ta=25 2w v cbo collector-base voltage -100v v ceo collector-emitter voltage -100v v ebo emitter-base voltage -5v i c collector current dc -5a i c collector current pulse -8a ib base current -120ma 1 D base b 2 D collector c 3 D emitter e to-220 HP127 pnp s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . HP127 pnp s i l i c o n t r a n s i s t o r
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